Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
| Autor: | O. V. Kucherova, A V Solomonov, V. I. Zubkov, Denis Davydov |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Condensed matter physics business.industry Heterojunction Condensed Matter Physics Crystallographic defect Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials Semiconductor Depletion region Charge carrier business Spectroscopy Quantum well |
| Zdroj: | Semiconductors. 44:335-340 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | For the first time, using a complex of admittance spectroscopy, light-emitting heterostructures with InGaN/GaN multiple quantum wells were studied in a wide temperature range of 6–300 K. Three peaks are found in the conductance spectra; these peaks correspond to emission of charge carriers from the quantum wells and point defects distributed in the semiconductor bulk. Two low-temperature peaks possess an anomalous behavior, specifically, the peak with a low value of apparent activation energy (17 meV) is shifted to higher temperatures compared with the higher-energy peak (30 meV). The latter is attributed to a bulk defect having anomalously large capture cross section σn = 1.5 × 10−11 cm2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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