Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects
| Autor: | Magali Gregoire, D. Delille, D. Ney, C. Trouiller, Brice Gautier, J.C. Dupuy, P. Chausse, M. Hopstaken, L.G. Gosset, N. Casanova, Joaquim Torres, S. Chhun |
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| Rok vydání: | 2005 |
| Předmět: |
Capacitive coupling
Interconnection Materials science Dielectric strength business.industry Time-dependent gate oxide breakdown Chemical vapor deposition Dielectric Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Plasma-enhanced chemical vapor deposition Forensic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 82:587-593 |
| ISSN: | 0167-9317 |
| Popis: | Self-aligned barriers have been widely investigated in the replacement of standard PECVD dielectric liners to decrease coupling capacitance. As an alternative to CVD or electroless approaches, a two step process based on the modification of the Cu surface is proposed. This technique consists first in enriching Cu surface with Si atoms followed by a nitridation step to complete the so called CuSiN self-aligned barrier. In this paper, the silicidation mechanism is described and the crucial role of the nitridation step is demonstrated in terms of barrier stability under electrical stress. CuSiN efficiency against Cu diffusion and oxidation is also evidenced. Compared to a standard SiCN barrier, CuSiN self-aligned barriers revealed a gain of at least 3 decades in time-dependent dielectric breakdown lifetime and up to 7% decrease in intra-level coupling capacitance. |
| Databáze: | OpenAIRE |
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