Electrical conductivity of the biaxially-strained GaSb(111) films
| Autor: | Hideki Kishimoto, Jun Nakamura, Akira Akaishi, Takuya Hatayama |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Potential well Materials science Strain (chemistry) Condensed matter physics 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Symmetry (physics) Pressure range Condensed Matter::Materials Science Singularity Electrical resistivity and conductivity 0103 physical sciences Symmetry breaking 0210 nano-technology |
| Zdroj: | 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS). |
| DOI: | 10.1109/iciprm.2016.7528663 |
| Popis: | We have investigated strain effects on the electrical conductivity of bulk GaSb and GaSb(111) films. For the biaxially-strained bulk systems, the electrical conductivity becomes highest at normal pressure and temperature for lower hole concentration. As the hole concentration becomes larger, the singularity of the electrical conductivity at normal pressure disappears. Such behaviors originate from the symmetry breaking under strain. For the two-dimensional film systems, the singularity of the electrical conductivity does not emerge, because the symmetry is not broken under the biaxial strain. The electrical conductivity increases with decreasing film thickness. This is due to the so-called quantum confinement effect. |
| Databáze: | OpenAIRE |
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