TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

Autor:	Dionysios Stefanakis, Konstantinos Zekentes
Rok vydání:	2014
Předmět:	Electron mobility Research groups Materials science Best fitting Field (physics) Band gap Doping Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Computational physics
Zdroj:	Microelectronic Engineering. 116:65-71
ISSN:	0167-9317
Popis:	A systematic study of the usually employed models of 4H-SiC bandgap energy value and carrier mobility in TCAD simulations has been performed. Theoretically calculated and experimentally determined values of these parameters are compared with the corresponding models used in TCAD simulations of different research groups as well as of related software developer SILVACO. Comparisons between physical and established semi-empirical models have been made and deviations from the experimental values are observed in many reported studies. Based on this analysis, the best fitting models and the corresponding coefficients are proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9a87477e294a591b1fae9440f2737f36 https://doi.org/10.1016/j.mee.2013.10.002 Zobrazit plný text záznamu Full Text from ScienceDirect