| Autor: | R. W Armstrong, D. L Thurston, P. J Boudreaux, C. Cm Wu, K. L Jackson |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Synthetic diamond Scanning electron microscope Mechanical Engineering Diamond Cleavage (crystal) engineering.material Microstructure Indentation hardness law.invention Mechanics of Materials law Indentation Fracture (geology) engineering General Materials Science Composite material |
| Zdroj: | Journal of Materials Science. 32:5035-5045 |
| ISSN: | 0022-2461 |
| DOI: | 10.1023/a:1018601013431 |
| Popis: | Indentation hardness and three-point bend tests were performed on perforated synthetic diamond substrates designed for use in a three-dimensional cube computer architecture based on interconnected stacking of multichip modules. The fracture strengths in bending of two substrate materials, with and without laser drilled interconnect “via holes”, were correlated with optical and scanning electron microscope (SEM) observations of the fracture surfaces, thus providing for matching of fracture strengths with different growth microstructures within the plates and, also, with the extent of weakening produced by the via holes. The relatively high strength levels, characteristic of diamond material, were found to be lowered somewhat either by a filamentary pattern of growth fissures in one material or less so by apparent cleavage fracturing among textured grains in a second material. In the latter case, the technique of fracture surface topography analysis (FRASTA) provided evidence of plastic flow having occurred during fracturing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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