Analysis of GaN Converter Circuit Stability Influenced by Current Collapse Effect
| Autor: | Ke Li, Paul Evans, Mark Johnson, Arnaud Videt, Nadir Idir |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Test bench Materials science 020208 electrical & electronic engineering Transistor Collapse (topology) 02 engineering and technology Converters 01 natural sciences Instability Threshold voltage law.invention Control theory law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Commutation Current (fluid) |
| Zdroj: | 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| DOI: | 10.1109/apec39645.2020.9124351 |
| Popis: | GaN transistors allow to design highly efficient and high power density converters due to their low conduction and switching losses. However, their very fast switching and low gate threshold voltage make them prone to gate instability issues. Furthermore, they suffer from current collapse issue that is notably known to impair on-state resistance, but other effects may be expected. This paper focuses on commutation behaviour and shows how current collapse also impacts the circuit stability by altering immunity to gate oscillations. Consequently, it is shown that the conventional double-pulse test (DPT) may not provide reliable assessment of the switching cell design. Theoretical analysis is carried out and a modified DPT test bench is proposed to evaluate the influence of current collapse on GaN converter circuit stability. The analysis is validated by experimental results based on the modified DPT setup. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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