Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition
| Autor: | James E. Maslar, William A. Kimes, Albert V. Davydov, Ryan Beams, Elias Garratt, Berc Kalanyan, Ravindra K. Kanjolia, Stephan J. Stranick, Irina Kalish |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
General Chemical Engineering chemistry.chemical_element Nanotechnology 02 engineering and technology General Chemistry Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Transition metal chemistry Chemical engineering Molybdenum Monolayer Materials Chemistry Sublimation (phase transition) Wafer Metalorganic vapour phase epitaxy Crystallite 0210 nano-technology |
| Zdroj: | Chemistry of Materials. 29:6279-6288 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/acs.chemmater.7b01367 |
| Popis: | High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor-phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metal–organic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis(tert-butylimido)bis(dimethylamido)molybdenum and diethyl disulfide, we deposit MoS2 films from ∼1 nm to ∼25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-... |
| Databáze: | OpenAIRE |
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