Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping
| Autor: | A. Montanaro, J. P. Mazellier, C. Larat, Pierre Legagneux, S. Mzali, Stephanie Molin, Odile Bezencenet |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Graphene business.industry Coplanar waveguide Doping chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention 010309 optics chemistry law 0103 physical sciences Broadband Hardware_INTEGRATEDCIRCUITS Optoelectronics 0210 nano-technology business Cvd graphene Excitation |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2237289 |
| Popis: | Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems. |
| Databáze: | OpenAIRE |
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