Autor: |
Jérôme Meziere, François Rieutord, F. Fournel, Hubert Moriceau, Pascal Gentile, B. Aspar, C. Morales, Alexis Bavard, Joël Eymery, A. Pascale, O. Rayssac, Benoit Bataillou, Christophe Maleville, Anne-Marie Charvet |
Rok vydání: |
2007 |
Předmět: |
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Zdroj: |
Solid State Phenomena. :29-32 |
ISSN: |
1662-9779 |
Popis: |
Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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