| Autor: |
Kentaro Matsuura, Hitoshi Wakabayashi, Kazuo Tsutsui, Masaya Hamada, Kuniyuki Kakushima, Takuya Hoshii, Iriya Muneta, Takuro Sakamoto |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 Electron Devices Technology and Manufacturing Conference (EDTM). |
| Popis: |
ZrS 2 film with polycrystalline two-dimensional atomic film was performed for large area application. It was confirmed that a layered ZrS 2 film on a SiO 2 /Si substrate was successfully achieved by hightemperature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved as 1,250 cm $^{2} V^{-1} s^{-1}$ and $8.5 x10 ^{17}$ cm $^{-3}$, respectively. MISFET applications are expected for future IoT-edge devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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