A new method of determining the stress state in microelectronic materials

Autor:	Ken K. Chin, Hancheng Liang, Shounan Zhao
Rok vydání:	1996
Předmět:	Photoelasticity Materials science business.industry Applied Mathematics Analyser Physics::Optics Stress (mechanics) symbols.namesake Light intensity Optics Fourier analysis symbols Microelectronics State (computer science) business Instrumentation Engineering (miscellaneous)
Zdroj:	Measurement Science and Technology. 7:102-105
ISSN:	1361-6501 0957-0233
DOI:	10.1088/0957-0233/7/1/014
Popis:	This paper introduces a new technique of determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier analysis of the measured emerging light intensity. The principle of operation is discussed and the apparatus is described. An example is demonstrated to illustrate the application of the technique.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9a58dd55b110adde54a245b32c5e931b https://doi.org/10.1088/0957-0233/7/1/014 Zobrazit plný text záznamu