A 0.11 μm CMOS technology featuring copper and very low k interconnects with high performance and reliability
| Autor: | Ikuhiro Yamamura, Satoshi Yamaguchi, Yoshihiro Takao, Hiroshi Kudo, Naoki Nagashima, Michiari Kawano, Yoshiyuki Kotani, Satoru Asai, Nobuhisa Naori, Keizaburo Yoshie, Takashi Nagano, Masaya Uematsu, Kazuo Sukegawa, Shingo Kadomura, Junichi Mitani |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
business.industry Electrical engineering chemistry.chemical_element Condensed Matter Physics Copper Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reliability (semiconductor) CMOS chemistry Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 42:15-25 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/s0026-2714(01)00233-5 |
| Popis: | This paper describes a 0.11 μm CMOS technology with high-reliable copper (Cu) and very low k (VLK) (k |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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