Deposition of silicon carbide films by plasma enhanced chemical vapour deposition
| Autor: | László Zanathy, Harald Suhr, László Szepes, J Ramirez, Andras Nagy |
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| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
Chemistry Organic Chemistry Inorganic chemistry technology industry and agriculture Combustion chemical vapor deposition Biochemistry Electrostatic spray-assisted vapour deposition Inorganic Chemistry Atomic layer deposition Chemical engineering Plasma-enhanced chemical vapor deposition Chemical vapor infiltration Materials Chemistry Metalorganic vapour phase epitaxy Physical and Theoretical Chemistry Thin film Plasma processing |
| Zdroj: | Journal of Organometallic Chemistry. 514:23-28 |
| ISSN: | 0022-328X |
| DOI: | 10.1016/0022-328x(95)06032-r |
| Popis: | Thin films of silicon carbide have been prepared by plasma enhanced chemical vapour deposition using Si(Si(CH3)3)4 as a precursor. This compound is stable against moisture and air and has a high vapour pressure. Furthermore, the compositions of the films prepared from this precursor show very little dependence on the plasma parameters. Consequently, this precursor is especially suited for practical applications of hard coatings. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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