| Autor: |
C. Kirchner, M. Boćkowski, Pawel Prystawko, Tadeusz Suski, Markus Kamp, Henryk Teisseyre, A. Śliwinski, M Schauler, J. Z. Domagala, S. Porowski, Michał Leszczyński, A Pelzmann |
| Rok vydání: |
1999 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. :1061-1065 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/s0022-0248(98)01004-5 |
| Popis: |
InxGa1−xN and AlxGa1−xN layers were grown by metalorganic chemical vapour deposition (MOCVD) on highly conductive single crystals of GaN. The samples were then examined using X-ray diffraction and photoluminescence. It was found that there is a substantial difference in properties between the layers grown on the N-face (00.{ 1 }), chemically active, and Ga-face (00.1), chemically inert, sides. The latter layers had smaller free-electron concentration, better crystallographic quality and different chemical compositions. All the examined layers were fully strained, even for 1.1% lattice mismatch between the GaN substrate and about 0.1 μm thick In0.11Ga0.88N layer. The half-widths of the photoluminesce (PL) dominant peaks correspond to the compositional gradients observed in X-ray diffraction. The positions of the PL peaks agree with the X-ray data if bowing parameters of 3.2 eV for InGaN layers and 0.25 eV for AlGaN layers were used. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect