Raman spectroscopy of porous silicon substrates
| Autor: | Ľubomír Vančo, Miroslav Mikolášek, Ján Greguš, Michal Hubeňák, Juraj Breza, Juraj Racko, Magdaléna Kadlečíková |
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| Rok vydání: | 2018 |
| Předmět: |
inorganic chemicals
Materials science Silicon chemistry.chemical_element macromolecular substances 02 engineering and technology Porous silicon Electrochemistry 01 natural sciences symbols.namesake 0103 physical sciences Wafer Electrical and Electronic Engineering 010302 applied physics business.industry technology industry and agriculture equipment and supplies 021001 nanoscience & nanotechnology Microstructure Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Anode chemistry symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Optik. 174:347-353 |
| ISSN: | 0030-4026 |
| Popis: | We have investigated the effect of the etching time on the Raman spectra of porous silicon prepared by anodic etching. Electrochemical destruction of the substrate increasing with the etching time and the correlation between the microstructure of the silicon wafer and the shape and position of their Raman spectra have been observed. Raman analysis has shown that the intensity of the Raman dominant silicon band decreases and the bandwidth is shifted to lower frequencies, depending on the morphology of the sample. Therefore we believe that the electrochemical destruction of the surface of Si substrates leads to surface amorphization. |
| Databáze: | OpenAIRE |
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