Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation
| Autor: | Daniel Vossing, Daniel Hiller, Heike Angermann, Patrice Balamou, Bert Stegemann, Martin Kasemann, Karim M. Gad |
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| Rok vydání: | 2015 |
| Předmět: |
Thermal oxidation
Materials science Passivation Silicon Annealing (metallurgy) Analytical chemistry Oxide General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Chemical engineering chemistry Crystalline silicon LOCOS Forming gas |
| Zdroj: | Applied Surface Science. 353:1269-1276 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2015.07.060 |
| Popis: | We analyze the influence of different oxidation methods on the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers with surface photo voltage and quasi-steady-state photo conductance measurements. We present a simple method by means of rapid thermal oxidation (RTO) and subsequent annealing in forming gas, which requires no complex surface pre-treatment or surface pre-conditioning after cleaning. This technique allows a reproducible preparation of high-quality ultra-thin oxide-nanolayers (1.3–1.6 nm) with a nearly intrinsic energetic distribution of interface states and a defect density of states of only 1 × 1012 cm−2 eV−1 at the minimum of the distribution. These results are compared with silicon oxide-nanolayers prepared by wet chemical oxidation and plasma oxidation where only a slight reduction of the interface defect density is achieved by subsequent anneal in forming gas environment. Furthermore, it is shown that applying the RTO oxide-nanolayer as an intermediate layer between Si and an a-SiNx:H layer, leads to a significant improvement of the surface passivation quality. |
| Databáze: | OpenAIRE |
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