| Autor: |
J. Micoud, C.-M. V. Lu, Maud Vinet, Charles Leroux, Xavier Federspiel, R. Gassilloud, Perrine Batude, Laurent Brunet, Vincent Delaye, G. Romano, L. Pasini, Xavier Garros, F. Deprat, Claude Tabone, D. Nouguier, N. Rambal, Bernard Previtali, P. Besombes, D. Ney, D. Barge, Francois Andrieu, A. Toffoli, M.-P. Samson, Thomas Skotnicki, A. Tsiara, Claire Fenouillet-Beranger |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
2017 Symposium on VLSI Technology. |
| Popis: |
This work provides breakthroughs in key technological modules for high performance and reliable 3D Sequential Integration with intermediate BEOL (iBEOL) in-between tiers. We demonstrate that (i) a high-quality solid phase epitaxy process is possible at 500°C, (ii) TiN native oxide removal prior to poly deposition leads to an improvement in gate stack reliability below 525°C and (iii) state-of-the-art SiOCH ULK in iBEOL is reliable up to 550°C 5h with W metal lines. A process integration is thus proposed to match the process windows of bottom layers (bottom FET and iBEOL) stability and top devices performance and reliability, opening perspectives for a wide range of applications and technologies using 3D Sequential Integration. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
