| Autor: |
H.C. Lin, Robert C. Potter, U. Anandakrishnan, Tai-Haur Kuo, D. Shupe |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
International Technical Digest on Electron Devices Meeting. |
| DOI: |
10.1109/iedm.1989.74346 |
| Popis: |
The I-V characteristics of a multipeak resonant tunneling diode (RTD) are analyzed. A large signal model is developed so that the multipeak RTD can be used with the SPICE3 circuit simulation program. The simulated result of a 4-b A/D (analog-to-digital) converter using this model is shown. It is noted that the model can be used with existing SPICE3 device models to simulate the performance of complex circuits that contain resonant tunneling diodes. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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