Characterization of deep interface states in SiO2/B-doped diamond using the transient photocapacitance method
| Autor: | Osamu Maida, Tetsuya Hirose, Daiskuke Kanemoto |
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| Rok vydání: | 2022 |
| Předmět: |
Materials science
Silicon dioxide business.industry Exciton Gate dielectric Metals and Alloys Diamond Cathodoluminescence Surfaces and Interfaces Chemical vapor deposition Edge (geometry) engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal chemistry.chemical_compound chemistry visual_art Materials Chemistry visual_art.visual_art_medium engineering Optoelectronics business |
| Zdroj: | Thin Solid Films. 741:139026 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2021.139026 |
| Popis: | We fabricated a diamond metal oxide semiconductor structure with a silicon dioxide (SiO2) film as the gate dielectric on B-doped diamond grown by a high-power-density microwave-plasma chemical vapor deposition method. The SiO2/B-doped diamond interface was characterized using a transient photocapacitance technique. The concentration of B in the B-doped diamond film was estimated to be 4.0 × 1017 cm−3, based on the intensity ratio of the exciton emissions observed in the cathodoluminescence measurements at approximately 80 K. Acceptor-type defects could be observed at approximately 1.28 and 1.82 eV above the valence-band edge. The observed defect at approximately 1.82 eV above the valence-band edge is expected to be an interface state of the SiO2/B-doped diamond. |
| Databáze: | OpenAIRE |
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