Atomistic behaviour of (n×3)-reconstructed areas of InAs–GaAs(001) surface at the growth condition
| Autor: | Shiro Tsukamoto, Toru Akiyama, Tomonoroi Ito, Tomoya Konishi, Ryo Kaida |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Surface (mathematics) In situ Materials science Morphology (linguistics) Nucleation Ab initio 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Inorganic Chemistry Molecular beam epitaxial growth Computational chemistry 0103 physical sciences Materials Chemistry Spatial evolution Statistical analysis 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 477:104-109 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.01.009 |
| Popis: | We have investigated the spatial evolution of ( n × 3 ) surface reconstructed areas during the molecular beam epitaxial growth of InAs–GaAs(001) by using ab initio-based calculation and in situ observation, in order to understand the mechanism of consequent QD nucleation. Statistical analysis of ( n × 3 ) -reconstructed morphology reveals that the fraction of ( 8 × 3 ) -reconstructed areas, as well as those of ( 4 × 3 ) and ( 6 × 3 ) , appears and decreases in the later stage of the growth. This behaviour is consistent with the result of our ab initio-based calculation incorporating chemical potentials of source materials in the gas phase. In contrast, fragmented ( 2 × 3 ) areas remain throughout the InAs growth as potential QD nucleation sites. |
| Databáze: | OpenAIRE |
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