A new nonlinear DC and temperature GaAs MESFET model

Autor:	B.P. Stothard, J. Rodriguez-Tellez
Rok vydání:	2002
Předmět:	chemistry.chemical_compound Nonlinear system Materials science Dependency (UML) chemistry Transconductance Electronic engineering Equivalent circuit MESFET Gallium arsenide Threshold voltage Computational physics Diode
Zdroj:	ISCAS
DOI:	10.1109/iscas.1993.393930
Popis:	A new DC nonlinear GaAs MESFET device model is presented. It offers improved accuracy over existing models by simulating the bias dependency of the device transconductance (/spl beta/) and pinch-off point (V/sub TO/) parameters. The effect of these bias dependencies becomes more important as a departure from room temperature is made. New expressions for simulating the temperature dependency of V/sub TO/ and /spl beta/ are presented. These provide improved accuracy over existing techniques. The new model effectively couples together the bias and temperature dependency of the device. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9a31023c7b97b5be44c4772845d35cc6 https://doi.org/10.1109/iscas.1993.393930 Zobrazit plný text záznamu