Pressure Effect on Si Quantum-Dot Potential

Autor: Y. Al-Douri, U. Hashim, N. M. Ahmed, Z. Sauli, Mohamad Rusop, Tetsuo Soga
Rok vydání: 2009
Předmět:
Zdroj: AIP Conference Proceedings.
Popis: Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies.
Databáze: OpenAIRE