Autor: |
Y. Al-Douri, U. Hashim, N. M. Ahmed, Z. Sauli, Mohamad Rusop, Tetsuo Soga |
Rok vydání: |
2009 |
Předmět: |
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Zdroj: |
AIP Conference Proceedings. |
Popis: |
Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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