GaP ring-like nanostructures on GaAs (100) with In[sub 0.15]Ga[sub 0.85]As compensation layers

Autor:	Supachok Thainoi, Somchai Ratanathammaphan, P. Boonpeng, N. Pankaow, Patchareewan Prongjit, Somsak Panyakeow
Rok vydání:	2013
Předmět:	Nanostructure Fabrication Materials science Photoluminescence Atomic force microscopy business.industry Optoelectronics Nanotechnology business Ring (chemistry) Epitaxy Molecular beam epitaxy Compensation (engineering)
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.4848482
Popis:	We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In0.15Ga0.85As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In0.15Ga0.85As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In0.15Ga0.85As layer thickness.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9a1445e5288bd3e31af3ee3ee26f467a https://doi.org/10.1063/1.4848482 Zobrazit plný text záznamu