| Autor: |
S.R. Hou, Yuan-Hann Chang, Chung Ren Li, S.L. Hsu, Yen Ann Chen, Wen-Chin Tsay, A. Chen, Song-Tsang Chiang, Willis Lin, Jyh-Wong Hong, Hsien-Jen Ting |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings. |
| DOI: |
10.1109/tencon.1995.496420 |
| Popis: |
Several 8/spl times/4 cm/sup 2/ single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p/sup +/ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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