Poly-Ge Tri-gate Nanowire Junctionless Charge-Trapping Flash Devices Formed with Low-Temperature Processes for 3D Memory Applications
| Autor: | Y.-C. Lu, K.-S. Chang-Liao, H.-K. Fang, K.-Y. Li, W.-H. Huang, C.-H. Shen, J.-M. Shieh |
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| Rok vydání: | 2017 |
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| Zdroj: | Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2017.ps-4-12 |
| Databáze: | OpenAIRE |
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