AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process

Autor:	Chun-Cheng Lin, Yu-Shyan Lin
Rok vydání:	2021
Předmět:	Materials science Passivation business.industry Transistor law.invention chemistry.chemical_compound Silicon nitride chemistry law Etching (microfabrication) Scientific method Optoelectronics General Materials Science High electron business
Zdroj:	Science of Advanced Materials. 13:638-641
ISSN:	1947-2935
Popis:	AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation using silicon nitride on HEMTs is examined. Passivation improves the dc, high-frequency, and power characteristics of AlGaAs/InGaAs HEMTs. The passivated HEMT has a maximum extrinsic transconductance of 207 mS/mm, a unity-current-gain frequency (fT) of 13 GHz, and a maximum oscillation frequency (fmax) of 26 GHz. Furthermore, the variation of dc characteristics of the passivated HEMT with temperature is reduced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::99e47c27fdd39eca56783a022d023fa0 https://doi.org/10.1166/sam.2021.3928 Zobrazit plný text záznamu