SIMS of silicon bombarded with Sb m + cluster ions

Autor:	S.N. Morozov, U. Kh. Rasulev
Rok vydání:	2014
Předmět:	Materials science Silicon Polyatomic ion Analytical chemistry General Physics and Astronomy chemistry.chemical_element Ion Monocrystalline silicon chemistry Physics::Plasma Physics Impurity Yield (chemistry) Cluster (physics) Atomic physics Boron
Zdroj:	Bulletin of the Russian Academy of Sciences: Physics. 78:516-519
ISSN:	1934-9432 1062-8738
DOI:	10.3103/s1062873814060203
Popis:	The emission of Sin+ (n = 1–11) cluster ions and SinXm+ (X stands for B or Sb) polyatomic ions when bombarding a single silicon crystal with Sbm+ (m = 1–4) cluster ions with energies E0 = 3–12 keV is studied. Considerable nonadditive enhancement of the yield of Sin+ cluster ions and most polyatomic ions is observed when the number of atoms in the bombarding cluster ions is increased. The sensitivity enhancement factor for detecting boron impurities is as high as 50 when the cluster-SIMS-molecule technique is applied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::99dfc848d59eb8d85a1d13589ce1d8a9 https://doi.org/10.3103/s1062873814060203 Zobrazit plný text záznamu Full text from SpringerLink