Synthesis and Thermoelectric Properties of ZrxTi1−xNiSn0.98Sb0.02 n-Type Half-Heusler Materials
| Autor: | Sung-Jae Joo, Jeongin Jang, Ho Seong Lee, Bok-Ki Min, Ji-Hee Son, Bong-Seo Kim |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Analytical chemistry Spark plasma sintering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Thermoelectric materials 01 natural sciences Electronic Optical and Magnetic Materials Thermal conductivity Impurity 0103 physical sciences Thermoelectric effect Materials Chemistry Electrical and Electronic Engineering Ingot 0210 nano-technology Ball mill |
| Zdroj: | Journal of Electronic Materials. |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-021-08938-0 |
| Popis: | Hf-free ZrxTi1−xNiSn0.98Sb0.02 (x = 0.25, 0.5, 0.75) n-type half-Heusler (HH) thermoelectric materials were synthesized by a serial processing method including induction melting (IM), annealing, ball milling, and spark plasma sintering (SPS). For comparison, a Hf-containing half-Heusler Hf0.25Zr0.25Ti0.5NiSn0.98Sb0.02 ingot was also alloyed by arc melting, and the effects of Hf on the thermoelectric properties were estimated. The ZrxTi1−xNiSn0.98Sb0.02 HH materials were nearly pure according to the x-ray diffraction analysis, but microscopic investigation revealed impurity phase inclusions of unalloyed Sn, Zr, and Ti. The power factor (PF) of the Hf-free HH materials reached the maximum value of 4.31 mWm−1 K−2 at 823 K in Zr0.75Ti0.25NiSn0.98Sb0.02, which was higher than Hf0.25Zr0.25Ti0.5NiSn0.98Sb0.02 (4.01 mWm−1 K−2 at 773 K) in this study. However, the thermal conductivity of the Hf-free samples was significantly higher, by which the maximum dimensionless figure of merit was slightly lower (ZTmax = 0.92 in Zr0.75Ti0.25NiSn0.98Sb0.02 at 873 K) than that of Hf0.25Zr0.25Ti0.5NiSn0.98Sb0.02 (ZTmax = 1.03 at 873 K). The thermal conductivity was decomposed into lattice and electronic contributions, and the possible correlation with Ni off-stoichiometry is discussed. |
| Databáze: | OpenAIRE |
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