A structural study on a-GaP prepared at different temperatures

Autor:	E.A. Davis, S J Gurman, N Elgun
Rok vydání:	1992
Předmět:	chemistry.chemical_classification Extended X-ray absorption fine structure Annealing (metallurgy) Analytical chemistry Infrared spectroscopy Mineralogy Condensed Matter Physics Amorphous solid Bond length chemistry Sputtering General Materials Science Thin film Inorganic compound
Zdroj:	Journal of Physics: Condensed Matter. 4:7759-7772
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/4/38/009
Popis:	A series of nearly stoichiometric a-GaP films has been prepared by RF sputtering on to substrates held at temperatures from 20-200 degrees C. Extended X-ray fine absorption (EXAFS) at both the Ga and P K edges, infrared absorption, and optical edge data have been used to understand the structures of these films. The stoichiometric amorphous network of GaP, which was found to be fourfold coordinated as expected, showed no chemical disorder. The development of the atomic order of the network with increasing deposition temperature and annealing, from the amorphous to the crystalline state, has been followed. The results are discussed in terms of the bond lengths and angles and the strength of the Ga-P bonds.
Databáze:	OpenAIRE
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