GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments
| Autor: | Anna Liao, Manuel Gallegos, Toshiro Hatake, William D. Smythe, Kyung-Ah Son, Leif Scheick, Gerald Lung, Richard D. Harris |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Gate dielectric Transistor Hardware_PERFORMANCEANDRELIABILITY Radiation law.invention Data acquisition Hardware_GENERAL law Electrode Hardware_INTEGRATEDCIRCUITS Optoelectronics General Materials Science Electronics business Layer (electronics) Radiation hardening Hardware_LOGICDESIGN |
| Zdroj: | Nanoscience and Nanotechnology Letters. 2:89-95 |
| ISSN: | 1941-4919 1941-4900 |
| Popis: | We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer.... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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