Photoconductive properties of polycrystalline selenium based lateral MISIM photodetectors of high quantum efficiency using different dielectrics as the charge blocking layer
| Autor: | Yi Jie Lin, Yu Wei Huang, Jian Siang Lin, Chieh Yang Chen, Fu-Ming Pan, Cheng Yi Chang, Yiming Li, Jeng-Tzong Sheu, Jye Yow Liao |
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| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Materials science business.industry Photoconductivity Photodetector Condensed Matter Physics Atomic and Molecular Physics and Optics Cathode Electronic Optical and Magnetic Materials Amorphous solid law.invention law Optoelectronics Quantum efficiency Electrical and Electronic Engineering Thin film business Dark current |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 30:12956-12965 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-019-01658-6 |
| Popis: | We studied the photoconductive performance of polycrystalline selenium (pc-Se) based photodetectors with a lateral metal–insulator-semiconductor-insulator–metal (MISIM) device structure. The insulator layer is a 10 nm-thick Ga2O3, HfO2, or Al2O3 thin film, and used as a charge blocking layer (CBL) to suppress dark current injected from the Al electrodes. The dark current suppression primarily depends on the barrier height of the junctions between the CBLs and electrodes. The Ga2O3 CBL exhibits a poor dark current suppression compared to the HfO2 and the Al2O3 CBLs because of a lower electron barrier at the cathode. The lateral pc-Se photodetectors exhibit a very high internal photocurrent gain due to Fowler–Nordheim tunneling at relatively low applied voltages. The better crystallinity of pc-Se grains formed on the Ga2O3 CBL leads to a higher photoconversion efficiency for the MISIM-Ga2O3 photodetector. Compared with amorphous Se based lateral MISIM photodetectors, the pc-Se photodetectors demonstrate a uniform and much better photoconductive performance over the visible spectrum. |
| Databáze: | OpenAIRE |
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