Physics-Based Analysis and Simulation of $\hbox{1}/f$ Noise in MOSFETs Under Large-Signal Operation
| Autor: | Hong Shick Min, Young June Park, Chan Hyeong Park, Sung-Min Hong |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Engineering
Noise temperature business.industry Noise spectral density Electrical engineering Shot noise Noise figure Electronic Optical and Magnetic Materials Computational physics Burst noise Noise generator Effective input noise temperature Flicker noise Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 57:1110-1118 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2010.2043186 |
| Popis: | This paper presents a study on 1/f noise in MOSFETs under large-signal (LS) operation, which is important in CMOS analog and RF integrated circuits. The flicker noise is modeled with noise sources as a perturbation in the semiconductor equations employing McWhorter's oxide-trapping model and Hooge's empirical 1/f noise model. Numerical results are shown for 1/f noise in the MOSFET in both small-signal operation and periodic LS operation. It is shown that McWhorter's model does not give any significant 1/f noise reduction when the oxide traps are distributed uniformly in energy and space. In contrast, Hooge's model gives almost 6-dB 1/f noise reduction as the gate off-voltage decreases below the threshold voltage. It is found that both models fall short of explaining the noise reduction by more than 6 dB, as observed experimentally in the literature. However, when only one active oxide trap is considered, which generates random telegraph signal (RTS) in drain current, the LS operation gives more than 6-dB low-frequency RTS noise reduction. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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