| Autor: |
Park Se-Hwan, Myung-Hoon Choi, Seonyong Lee, Seung-jae Lee, Jisoo Cho, Garam Kim, Youngsun Song, Ki-chang Jang, Dongku Kang, Young-don Choi, Jisu Kim, Sang-Lok Kim, Hyun-Jun Yoon, Jung-Hwan Choi, Ii Han Park, Jong-Eun Park, Kyung-Hwa Kang, Jaeheon Jeong, Heejin Kim, Dong-Hyun Shin, Sung-Min Joe, Joonsoo Kwon, Jonghoo Jo, Lee Han-Jun, Hyung-Gon Kim, Doohyun Kim, Jungmin Park, Joon-Suc Jang, Dae-Seok Byeon, Kanabin Lee, Jungkwan Kim, Jinbae Bang, Jeong-Don Lim, Park Jiyoon, Seuna Hyun Moon, Sung-Won Yun, Ki-whan Song, Pansuk Kwak, Sohyun Park, Minseok Kim, Joo-Yona Park, Hwajun Jang, Jong Min Kim, Deokwoo Lee, Sang Joon Hwang |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
ISSCC |
| DOI: |
10.1109/isscc19947.2020.9063053 |
| Popis: |
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for diverse digital applications. [4] |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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