Highly Reliable Cu Wiring Layer of 1/1 μm Line/Space Using Newly Designed Insulation Barrier Film
| Autor: | Kazuyuki Mitsukura, Masaya Toba, Shinichiro Abe, Kazuhiko Kurafuchi, Tomonori Minegishi |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Interconnection Fabrication Materials science business.industry Electrical engineering 02 engineering and technology Temperature cycling Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Highly accelerated stress test 0103 physical sciences Automotive Engineering Trench Interposer Composite material 0210 nano-technology business Layer (electronics) |
| Zdroj: | International Symposium on Microelectronics. 2017:000140-000145 |
| ISSN: | 2380-4505 |
| Popis: | The interposer or fan-out packaging technology with ultra-fine line/space has been required in order to achieve high density interconnection between chips with low cost. In this paper, we propose the iBF (insulation barrier film) to satisfy the insulation reliability of 1/1 μm ultra-fine trench wiring. The features of iBF are very low moisture absorptivity less than 0.3%, chloride ion impurities less than 1.0 ppm and high resistance to hydrolysis. In addition, iBF has good adhesive strength to Ti and Cu. The trench wiring was fabricated for mechanical and insulation reliability evaluation using photosensitive dielectric, then covered with iBF. The obtained trench wiring with 2/2, 1.5/1.5 and 1/1 μm line/space has passed the reliability tests such as moisture sensitivity level 2, thermal cycling test and biased HAST (highly accelerated stress test). We have also verified high resolution of photosensitive dielectric and fabrication of ultra-fine trench wiring on iBF to realize fine multi-layer wiring. |
| Databáze: | OpenAIRE |
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