Mechanisms of Raman Scattering in doped Indium Nitride

Autor:	C. Pinquier, F. Demangeot, Sandra Clur-Ruffenach, Bernard Gil, B. Maleyre, Miguel Gaio, J. Frandon, Olivier Briot
Rok vydání:	2004
Předmět:	Indium nitride Materials science Condensed matter physics Phonon Doping Charge density Light scattering Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake chemistry symbols Plasmon Excitation Raman scattering
Zdroj:	MRS Proceedings. 831
ISSN:	1946-4274 0272-9172
Popis:	Highly n-doped InN layers are investigated by means of Raman scattering: a strong mode is evidenced near the frequency of the A1(LO) phonon, despite the high conductivity of the films. This observation is interpreted assuming the breakdown of the wave-vector conservation leading to the decoupling of the plasmon from the phonon. The lineshape of the longitudinal optical mode is simulated using the Lindhard-Mermin dielectric function for various light scattering processes: we found that the charge density fluctuation mechanism is dominant, at least in the visible excitation range.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::996332c819da64d93e83552781589af5 https://doi.org/10.1557/proc-831-e4.8 Zobrazit plný text záznamu Full text from SpringerLink