Pressure-Dependent Etching Mechanism and Induced Dielectric Properties Variation of BZN Thin Films in SF6/Ar Plasma
| Autor: | Liping Dai, Zhong Zhiqin, Song Wenping, Shuya Wang, Guojun Zhang |
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| Rok vydání: | 2015 |
| Předmět: |
Permittivity
Materials science General Chemical Engineering technology industry and agriculture Analytical chemistry General Chemistry Dielectric Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy Etching (microfabrication) Chemical binding Dielectric loss Thin film Reactive-ion etching |
| Zdroj: | Plasma Chemistry and Plasma Processing. 35:1119-1127 |
| ISSN: | 1572-8986 0272-4324 |
| DOI: | 10.1007/s11090-015-9641-x |
| Popis: | Reactive ion etching was used to study bismuth zinc niobate (BZN) thin films etching in SF6/Ar plasma as a function of pressure. The etch rate increases as the pressure increases from 1 to 20 mTorr and decreases when the pressure exceeds 20 mTorr. The film surfaces were analyzed to determine the etching mechanism using X-ray photoelectron spectroscopy. Pressure is found to have an effect on etch reaction and non-volatile etch by-products removal through different ion density and energy, thus resulting in varying compositions, element chemical binding states on the film surface. Dielectric properties of the film, modified by SF6/Ar plasma, show an obvious variation with pressure. The permittivity shows a slight decrease in the range of 1–20 mTorr but a sharp decrease at 30 mTorr. Instead, the dielectric loss variation exhibits an opposite trend. |
| Databáze: | OpenAIRE |
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