Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates
| Autor: | Masaru Haraguchi, Kazuhiko Shimomura, Katsumi Kishino, Takeshi Nagano, Hiroshi Hattori, Ichirou Nomura, Masayuki Arai, Akihiko Kikuchi, Hiroyuki Shimbo |
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| Rok vydání: | 1998 |
| Předmět: |
Chemistry
business.industry Quantum-confined Stark effect Analytical chemistry Condensed Matter Physics Inorganic Chemistry Wavelength symbols.namesake Stark effect Attenuation coefficient Electric field Materials Chemistry symbols Optoelectronics business Refractive index Quantum well Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. :732-736 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(98)80153-x |
| Popis: | ZnCdSe/MgZnCdSe multiple quantum well (MQW) devices were fabricated on InP substrates by molecular beam epitaxy, and quantum-confined Stark effect (QCSE) in the devices were investigated by measurements of reflectance variations at the top surface and absorption coefficient variations in the MQW region with changing applied voltage at room temperature. As a result, remarkable reflectance variations were observed near 587 nm wavelength, accompanied by red shifts of the transition wavelength with increasing applied voltage. A maximum reflectance variation of 5.2% was obtained under the applied voltage of − 7.5 V (the electric field of 1.9 × 10 5 V/cm). From the electromagnetic analysis of the device structure, the refractive index variation of 2.4% per well in the MQW was theoretically estimated for the maximum reflectance variation. |
| Databáze: | OpenAIRE |
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