Study of indium phosphide wafers treated by long time annealing at high temperatures

Autor:	K. Zdansky, Pavel Hlídek, L. Pekarek
Rok vydání:	2004
Předmět:	Absorption spectroscopy Chemistry Annealing (metallurgy) Semiconductor materials Analytical chemistry Mineralogy Crystal growth Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Czochralski method Indium phosphide Wafer Instrumentation
Zdroj:	The European Physical Journal Applied Physics. 27:197-200
ISSN:	1286-0050 1286-0042
Popis:	High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::993d41bcf73666b430a01e518315c088 https://doi.org/10.1051/epjap:2004118 Zobrazit plný text záznamu