Effect of Interstitials Embedded in Pre‐Patterned Si Substrate on Location of Ge Nanoislands

Autor:	Timur Atovullaev, Zhanna Smagina, Kirill V. Pavskii, A. V. Dvurechenskii, Pavel L. Novikov
Rok vydání:	2017
Předmět:	Materials science business.industry Condensed Matter Physics Ion Nanoimprint lithography law.invention Crystallography Molecular dynamics Si substrate Etching (microfabrication) law Optoelectronics Irradiation business Groove (music) Molecular beam epitaxy
Zdroj:	physica status solidi c. 14:1700200
ISSN:	1610-1642 1862-6351
Popis:	Large-area periodical pattern on Si(100) was fabricated using combination of nanoimprint lithography and ion irradiation through mask. Ordered structures with grooves and ridges were prepared by the selective etching of regions amorphized by ion irradiation. Laterally ordered chains of Ge nanoislands were grown by molecular beam epitaxy of Ge on the pre-patterned Si substrates. It was shown, that the location of subsequently grown Ge nanoislands depends upon the sidewall inclination in grooves. The effect is ascribed to strain induced by Ge interstitials under the groove's bottom. Our proposal was confirmed by molecular dynamics calculations that allowed the determination of strain in grooves as dependent on the groove's shape.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::993c8abcb3e87bf68e436acb7ca90c9e https://doi.org/10.1002/pssc.201700200 Zobrazit plný text záznamu Plný text