A standard CMOS neural stimulator IC with high voltage compliant output current driver

Autor: Hyouk-Kyu Cha, Vo Nhut Tuan
Rok vydání: 2017
Předmět:
Zdroj: ISOCC
DOI: 10.1109/isocc.2017.8368915
Popis: This paper presents a 180nm CMOS biphasic neural stimulator integrated circuit for implantable prosthetic devices. The proposed stimulator has the ability to deliver up to 1-mA of well-matched biphasic current through 10-kΩ load using 12.8 V supply voltage. A voltage compliance of 11.5 V is achieved by utilizing a cascode current-mirror output driver topology. In order to allow standard CMOS working at high voltage, transistor stacking and dynamic gate biasing techniques are used. In addition, an active charge balancing circuit is utilized for maintaining zero net charge when a stimulation cycle is complete.
Databáze: OpenAIRE