Autor: |
Ramaswamy Murugan, B.J. Kalaiselvi, R. Sridarane |
Rok vydání: |
2006 |
Předmět: |
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Zdroj: |
Materials Science and Engineering: B. 127:224-227 |
ISSN: |
0921-5107 |
DOI: |
10.1016/j.mseb.2005.10.028 |
Popis: |
Results of systematic studies on dielectric properties of Sr 0.8 Bi 2.2 (V 0.2 Nb 0.8 ) 2 O 9 prepared by solid state route is reported. A clear enhancement in the peak dielectric constant at the Curie temperature was noticed for Sr 0.8 Bi 2.2 (V 0.2 Nb 0.8 ) 2 O 9 compared to SrBi 2 Nb 2 O 9 . Scanning electron micrograph (SEM) of Sr 0.8 Bi 2.2 (V 0.2 Nb 0.8 ) 2 O 9 revealed dense structure by vanadium doping, although small voids or pores were found in the sample. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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