Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
| Autor: | Ioan Costina, H.-J. Müssig, Ch. Lohe, Mindaugas Lukosius, Ch. Wenger, R. Sorge, S. Pasko, J. Dabrowski |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials PMOS logic chemistry MOSFET Optoelectronics Work function Electrical and Electronic Engineering Metal gate business Tin Forming gas High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 85:1762-1765 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2008.05.002 |
| Popis: | HfO"2 films were grown by atomic vapour deposition (AVD) on SiO"2/Si (100) substrates. The positive shift of the flat band voltage of the HfO"2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5x10^1^2cm^-^2. The interface trap charge density of HfO"2/SiO"2 stacks can be reduced to 3x10^1^1eV^-^1cm^-^2 near mid gap, by forming gas annealing. The extracted work function of 4.7eV preferred the use of TiN as metal gate for PMOS transistors. TiN/HfO"2/SiO"2 gate stacks were integrated into gate-last-formed MOSFET structures. The extracted maximum effective mobility of HfO"2 based PMOS transistors is 56cm^2/Vs. |
| Databáze: | OpenAIRE |
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