MMIC power amplifier based on AlGaN∕GaN HEMTs at 10 GHz

Autor:	Martin Neuburger, F.-J. Berlec, Helmut Leier, Volker Ziegler, R.S. Balmer, R. Behtash, T. Martin, Hermann Schumacher, H. Tobler
Rok vydání:	2004
Předmět:	Materials science Maximum power principle business.industry Amplifier Transistor RF power amplifier High-electron-mobility transistor law.invention Power (physics) law Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit Power density
Zdroj:	Electronics Letters. 40:564
ISSN:	0013-5194
DOI:	10.1049/el:20040378
Popis:	A monolithic microwave integrated circuit power amplifier consisting of one 8/spl times/100 /spl mu/m AlGaN/GaN transistor has been realised. At 10 GHz the coplanar amplifier delivers 35.7 dBm continuous-wave (CW) output power corresponding to a power density of 4.6 W/mm with 26% maximum power added efficiency (PAE) at the bias point V/sub DS/=40 V. Reducing the bias to V/sub DS/=25 V results in 34.2 dBm maximum CW output power with 32% PAE at 10 GHz.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::99148aee517d5c1ea58d14fbe433c0da https://doi.org/10.1049/el:20040378 Zobrazit plný text záznamu