A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs–GaAs Heterostructure
| Autor: | Tomoyoshi Mishima, Kiichi Ueyanagi, Yuichi Ono, Toshiyuki Usagawa, Yasuhiro Shiraki, Yasushi Sawada, Yoshifumi Katayama, Makoto Morioka |
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| Rok vydání: | 1984 |
| Předmět: |
Materials science
Chemical substance business.industry Transistor Doping General Engineering General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Condensed Matter::Materials Science Computer Science::Emerging Technologies law Condensed Matter::Superconductivity Optoelectronics Field-effect transistor business Fermi gas Science technology and society Molecular beam epitaxy |
| Zdroj: | Japanese Journal of Applied Physics. 23:L150 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | A new two-dimensional electron gas (2DEG) field-effect transistor (FET) which operates in an MOS transistor-like mode is fabricated on undoped AlGaAs–GaAs heterostructures grown by both molecular beam epitaxy and organometallic vapour phase epitaxy. This device with very simple structure is expected to have performance comparable to those of selectively doped heterostructure FETs and can easily be integrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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