An Unusual Mechanism of Misfit Stress Relaxation in Thin Nanofilms
| Autor: | S. A. Teys, E. M. Trukhanov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Superstructure Phase transition Materials science Physics and Astronomy (miscellaneous) Condensed matter physics chemistry.chemical_element Germanium 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Crystal chemistry 0103 physical sciences Ultimate tensile strength Stress relaxation 0210 nano-technology Layer (electronics) |
| Zdroj: | Technical Physics Letters. 45:1144-1147 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785019110282 |
| Popis: | A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained atomic layer. The 7 × 7 → 5 × 5 phase transition in a Ge film on Si(111) substrate involves partial compensation of compressive stresses in the interface between volume (bulk) crystal and superstructure by means of tensile straining of loose layers of the surface phase. |
| Databáze: | OpenAIRE |
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