Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface
| Autor: | Yu Hsun Chu, Shin Ye Lee, Li Hong Wang, Hou Ju Chen, Christopher J. Butler, Po Ya Yang, Minn-Tsong Lin, Han Yeh, Li Syuan Lu, Wen-Hao Chang |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic units law.invention Depletion region Zigzag law Electric field 0103 physical sciences Monolayer Scanning tunneling microscope 010306 general physics 0210 nano-technology Spectroscopy |
| Zdroj: | Applied Physics Letters. 113:241601 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5053144 |
| Popis: | Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. |
| Databáze: | OpenAIRE |
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