Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description

Autor:	O. Rozeau, M. Minondo, Maud Vinet, Jean-Charles Barbe, Patrick Scheer, Thierry Poiroux, Andre Juge, Marie-Anne Jaud, Sebastien Martinie
Rok vydání:	2015
Předmět:	business.industry Computer science Transistor Electrical engineering Semiconductor device modeling Electronic Optical and Magnetic Materials law.invention Model description law Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering Back bias Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Electron Devices. 62:2760-2768
ISSN:	1557-9646 0018-9383
Popis:	A detailed presentation of the latest version of Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this paper, compact modeling of intrinsic currents and charges, including all physical effects required to describe decananometer transistors, is detailed. This model is valid for all independent double-gate architectures, very accurate and feature excellent predictability over technological parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::990ae62f6e330983eeef2f0a4d69dd2b https://doi.org/10.1109/ted.2015.2458336 Zobrazit plný text záznamu