Ultra-thin silicon-on-sapphire for high-density active-matrix liquid crystal display (AMLCD) drivers

Autor:	Stephen D. Russell, Bruce W. Offord, Terry Stuart, Randy L. Shimabukuro, Mark A. Handschy
Rok vydání:	1994
Předmět:	Materials science Liquid-crystal display Silicon business.industry Transistor chemistry.chemical_element Substrate (electronics) Active-matrix liquid-crystal display Epitaxy Active matrix law.invention Silicon on sapphire chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics business
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.172132
Popis:	Single-crystal ultra-thin (< 100 nm) silicon on sapphire (UTSOS) has been fabricated using solid-phase epitaxy and regrowth techniques to produce a high quality semiconductor material on a transparent substrate ideal for active-matrix liquid crystal display (AMLCD) applications. MOS devices fabricated in this material have lower leakages, small thresholds, and higher transconductances than those fabricated in conventional unimproved SOS.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
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