Physical properties of hydrogenated Al-doped ZnO thin layer treated by atmospheric plasma with oxygen gas
| Autor: | Hong-Seung Kim, Chae-Ryong Cho, Kyun Ahn, Young-Man Jeong, Ho-Jun Lee, Se-Young Jeong, Hyung-Soo Ahn, Soon-Gil Yoon |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Hydrogen Band gap Doping Metals and Alloys Analytical chemistry chemistry.chemical_element Atmospheric-pressure plasma Surfaces and Interfaces Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Sputtering Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 518:4066-4070 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.02.028 |
| Popis: | Hydrogenated Al-doped ZnO (H:AZO) thin films were deposited on glass substrates at room temperature by radio-frequency magnetron sputtering at various hydrogen flow rates. The addition of hydrogen improved the resistivity of the H:AZO films significantly. A thin insulating layer was produced on H:AZO films by atmospheric pressure plasma with Ar/O2 reactive gas. The resistivity degenerated and the optical band gap of the oxygen plasma-treated H:AZO films decreased from 3.7 eV to 3.4 eV. This was attributed to a decrease in the hydrogen concentration at the film surface according to elemental depth analysis. |
| Databáze: | OpenAIRE |
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