Investigation of Cu-related deep levels in semi-insulating GaAs by PICTS

Autor:	G. Zychowitz, T. Steinegger, J R Niklas, G Kühnel, W. Siegel
Rok vydání:	2001
Předmět:	Materials science Deep level Semiconductor materials Analytical chemistry chemistry.chemical_element Condensed Matter Physics Copper Spectral line Electronic Optical and Magnetic Materials Impurity diffusion chemistry Electrical and Electronic Engineering Diffusion (business) Semi insulating
Zdroj:	Physica B: Condensed Matter. :800-803
ISSN:	0921-4526
DOI:	10.1016/s0921-4526(01)00807-9
Popis:	Cu diffusion into semi-insulating GaAs was performed at 1150°C. The PICTS spectra of the diffused GaAs show several Cu-related peaks. The height of the characteristic low-temperature peak (CuA, T≈150 K) is proportional to the total Cu concentration determined by AES. The appearance and the peak heights of further Cu-related peaks in the spectra are obviously a function of the Cu concentration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::98e2f6824d6429985141ea73a6d78998 https://doi.org/10.1016/s0921-4526(01)00807-9 Zobrazit plný text záznamu Full Text from ScienceDirect